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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV47AFI DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min.) *Collector-Emitter Saturation Voltage:VCE(sat)= 1.5V(Max.)@IC= 5A *High Speed Switching APPLICATIONS *Designed for 220V switchmode power supply, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCER VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage RBE= 10 Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage VALUE 1000 UNIT V Collector Current-Continuous Collector Current-Peak w w scs .i w 1000 450 7 V V V 9 A 15 8 10 55 150 -65~150 A A A W .cn mi e Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.27 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage CONDITIONS IC= 0.1A; IB= 0; L= 25mH IE= 50mA; IC= 0 MIN 450 7 BUV47AFI TYP. MAX UNIT V V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A B 3.0 V VBE(sat) ICER ICEV IEBO Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC= 5A; IB= 1A B 1.6 V mA mA mA VCE= 850V; RBE=10 VCE= 850V; RBE=10;TC=125 Switching Times, Resistive Load ton ts tf Turn-on Time Storage Time Fall Time w w. w sem isc VEB= 5V; IC= 0 VCE= 850V; VBE=-2.5V VCE= 850V; VBE=-2.5V;Tj= 125 .cn i 0.4 3.0 0.15 1.5 1.0 0.7 3.0 0.8 s s s IC= 5A; IB1= -IB2= 1A; VCC= 150V isc Websitewww.iscsemi.cn |
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